Introduction

Aluminum Nitride (AlN) Ceramic to Metal Threaded Components are high-performance hybrid structures where precision AlN ceramic elements (featuring threaded holes, studs, or inserts) are permanently joined to metal parts (e.g., Kovar, stainless steel, copper). These components leverage AlN’s exceptional thermal conductivity and electrical insulation while enabling robust mechanical assembly via threading. Common forms include AlN bushings with threaded metal sleeves, AlN insulators with embedded metal studs, or metal-AlN threaded feedthroughs.

Key Advantages

• Unmatched Thermal Management: Combines AlN’s extremely high thermal conductivity (170–220 W/m·K) with metal’s structural integrity, ideal for heat dissipation.

• Electrical Isolation: AlN provides excellent dielectric strength (>15 kV/mm), isolating high-voltage/current metal parts.

• Hermetic Sealing: Reliable ceramic-metal bonds (brazed/sintered) ensure leak-tight seals for vacuum/UHV environments.

• High-Temperature Stability: Withstands continuous use up to 950°C (1,742°F) in inert/controlled atmospheres.

• Low CTE Mismatch: Advanced joining techniques minimize stress with metals like Mo, Cu-Mo, or Kovar.

• Corrosion & Plasma Resistance: AlN resists molten metals, acids (non-HF), and plasma erosion.

• Mechanical Rigidity: Threads maintain precision under thermal cycling and vibration.

• Weight Reduction: Replaces bulky all-metal assemblies with lightweight, high-performance hybrids.

Performance Characteristics

• Thermal Conductivity: 170–220 W/m·K (5-8× higher than alumina).

• Max. Operating Temp: 950°C (1,742°F) in inert gas; ~450°C (842°F) in air (oxidation limit).

• Dielectric Strength: 15–25 kV/mm.

• Volume Resistivity: >10¹⁴ Ω·cm @ 25°C.

• CTE (AlN): 4.5 × 10⁻⁶/°C (RT–400°C) – matched to Mo/Kovar.

• Flexural Strength: 300–400 MPa.

• Joint Strength (Shear): >70 MPa (for quality brazed/sintered joints).

• Vacuum Leak Rate: <1 × 10⁻⁹ mbar·L/s (He).

• Metal Compatibility: Kovar, Mo, Cu, Cu-W, SS316.

Primary Applications

• Power Electronics: IGBT/SiC/GaN module bases, heatsink insulators, threaded DCB substrates.

• Semiconductor Manufacturing: Plasma etcher components, RF electrode feedthroughs, heater-threaded mounts.

• Laser Diode/Thermoelectric Coolers (TECs): Hermetic packages with threaded heat-spreading bases.

• Aerospace & Defense: Radar TR module housings, missile electronics cooling, threaded UHV sensors.

• EV/HEV Systems: Power converter bushings, battery contact isolators.

• High-Frequency RF Devices: Waveguide flanges, antenna feed isolators.

• Vacuum Systems: Threaded feedthroughs for thermocouples/electrodes.

• LED Packaging: High-power COB (Chip-on-Board) mounts with thermal vias.